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Microelectronics

Flip Chip and Thermal Test Die

Delphi FA06 Test Die

The Delphi FA (Full Array) series of test die is designed to simulate the I/O of CMOS-like devices at various pad pitches. These test vehicles form the basis of a useful die standard for the evaluation of flip chip applications as a function of various bump, materials, or assembly variables. A limited subset of FA series die have been designed for wire bond evaluations. See "options available" for availability of wire bond compatible die.

The FA6 test chip is designed with I/O pads on 6 mil (203 micron) pitch located on the peripheral of the die. The 0.2-inch by 0.2-inch FA6 die contains 893 pads giving 446 daisy chain pairs.

IC Fab Information

  • Wafer size
  • 5-inch (125 mm)
  • Die thickness
  • 600-650 microns
  • Metal thickness
  • 17k angstroms
  • Metal composition
  • Al/Cu/Si (98/1/1)
  • Passivation thickness
  • 10k angstroms
  • Passivation type
  • Nitride

    Die Sizes Available

    • .200" x .200"
    • .400" x .400"
    • .400" x .600"

    Options Available

    1) Five-inch wafer, no bumps, nitride passivation, 45-micron circular passivation openings (diagram)
    2) Five-inch wafer, bumped 63Sn/37Pb solder, UBM diameter 89 microns, bump height 95 microns (diagram)

    Test Die

     

    Daisy Chain Dimensional Information

     

    The test die offered on this web site are to be used to characterize assembly processes and materials. Applying the data from the test die to a functional system is the responsibility of the user. Delphi makes no warranty, express or implied including the implied warranties of merchantability and fitness for a particular purpose, that the user's system designed using that data will perform as intended by the user.