Microelectronics

Insulated-gate Bipolar Transistors (IGBTs) from Delphi are cost-effective output drivers for automotive ignition systems. These devices are optimized for ruggedness and low saturation voltage. The on-board over-voltage clamp protects the device during open-secondary conditions and provides a breakdown voltage that is tightly controlled and nearly independent of temperature. These devices can be supplied as bare die or in TO-220 plastic packages.

Features

• BVces = 660 V
• Vce sat = 1.7.V
• Ic = 6.5 A
• Logic-level gate drive
• On-board over-voltage clamp
• ESD protection for gate electrode
• Reverse-battery protection
• Low saturation voltage
• High-temperature capabilty (175° C)
• High-energy capability
  

Absolute Maximum Ratings (Tj=25°C)
Symbol	Parameter	Ratings	Unit
Vge	Gate-Emitter Voltage	±12	V
Vce	Collector-Emitter Voltage	680	V
Ice	Collector Current (continuous)	8	A
Eas	Avalanche Energy	400	mJ
Ti	Operating Temp. (junction)	175	°C

Specifications

		25°C			-40°C			150°C
Symbol	Parameter	Min	Typ	Max	Min	Typ	Max	Min	Typ	Max	Units
BVces	Collector-Emitter Breakdown Voltage IC=10mA, Rge=300ohms	630	660	680	630	660	680	630	660	680	V
BVecs	Emitter-Collector Breakdown Voltage IC=1mA	20			20			20			V
Ices	Collector-Emitter Leakage Current Vce=360V, Vge=0V			20			10			200	µA
Vce(sat)	Collector-Emitter Saturation Voltage Vge=3.5V, Ic=12A		1.2	1.7		1.3	1.8		1.1	1.6	V
Vge(th)	Gate Threshold Vge=Vce, Ic=1.0mA	1.2	1.4	2.1	1.2	1.5	2.3	0.7	0.9	1.9	V
BVgeo	Gate-Emitter Clamp Breakdown Voltage Vce=Open, Ige=5.0mA	17	19	22	17	19	22	17	19	22	V
Ige	Gate-Emitter Bias Current Vge=10V, Vce=0V			5			5			10	µA
Td(off)	Turn off Delay (90% VG to 90% Ic) Vcc=20V, Vge=5V, Rg=500			5			5			5	µsec
Tf	Fall Time (90% Ic to 10% Ic) Vcc=20V, Vge=5V, Rg=500ohms			10			10			13	µs